A team at Universidade Nova de Lisboa in Portugal have produced the world’s first field-effect transistor based on paper. The paper layer acts as an “interstrate”, with the actual FET components being fabricated onto both sides: so the paper holds the transistor together and acts as an insulator. Amazingly in tests the paper transistor performed better than amorphous silicon transistors and even approaches the performance of state-of-the-art oxide thin-film transistors. Why is this interesting news? Mainly since paper is a lower-cost substrate than silicon, so this invention opens the way for cheap, or even disposable, paper displays, smart labels, RFID technology… basically expect more ubiquitous technology integration in future products. [Physorg]